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MJ14002G

MJ14002G
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Specifikācijas

Kategorijas
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
80 V
Collector- Emitter Voltage VCEO Max
80 V
Collector-Emitter Saturation Voltage
1 V
Configuration
Single
Continuous Collector Current
60 A
DC Collector/Base Gain hfe Min
30
Emitter- Base Voltage VEBO
5 V
Height
8.51 mm
Length
38.86 mm
Maximum DC Collector Current
60 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Packaging
Tray
Pd - Power Dissipation
300 W
Product Type
BJTs - Bipolar Transistors
Series
MJ14002
Technology
SI
Transistor Polarity
NPN
Unit Weight
Width
26.67 mm

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Everything is excellent! recommend this seller!
Works. Find the price of this product is very good
Decent quality, not минвелл certainly, but enough decent
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Great product. Arrived ahead of time. Thank you
Vairāk

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MJ14002G
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MJ14002G Jaunumi

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