Daļas numurs MJB42CT4G Kategorijas Bipolar Transistors - BJT RoHS Datu lapas MJB42CT4G Apraksts Bipolar Transistors - BJT 6A 100V 65W PNP
Kategorijas Bipolar Transistors - BJT Collector- Base Voltage VCBO 100 V Collector- Emitter Voltage VCEO Max 100 V Collector-Emitter Saturation Voltage 1.5 V Configuration Single Continuous Collector Current 6 A DC Collector/Base Gain hfe Min 30 Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 3 MHz Height 4.83 mm Length 10.29 mm Maximum DC Collector Current 6 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 65 C Mounting Style SMD/SMT Package / Case TO-263-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 65 W Product Type BJTs - Bipolar Transistors Series MJB42C Technology SI Transistor Polarity PNP Unit Weight Width 9.65 mm