Daļas numurs ZDT1053TA Kategorijas Bipolar Transistors - BJT RoHS Datu lapas ZDT1053TA Apraksts Bipolar Transistors - BJT Dual 75V NPN HighG
Kategorijas Bipolar Transistors - BJT Collector- Base Voltage VCBO 150 V Collector- Emitter Voltage VCEO Max 75 V Configuration Dual Continuous Collector Current 5 A DC Collector/Base Gain hfe Min 260 at 10 mA, 2 V, 300 at 1 A, 2 V, 150 at 2 A, 2 V, 30 at 5 A, 2 V DC Current Gain hFE Max 260 Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 140 MHz Height 1.6 mm Length 6.7 mm Maximum DC Collector Current 5 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case SM-8 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 2.75 W Product Type BJTs - Bipolar Transistors Series ZDT1053 Technology SI Transistor Polarity NPN Width 3.7 mm