Daļas numurs NZT560A Kategorijas Bipolar Transistors - BJT RoHS Datu lapas NZT560A Apraksts Bipolar Transistors - BJT NPN Transistor Low Saturation
Kategorijas Bipolar Transistors - BJT Collector- Base Voltage VCBO 80 V Collector- Emitter Voltage VCEO Max 60 V Collector-Emitter Saturation Voltage 400 mV Configuration Single Continuous Collector Current 3 A DC Collector/Base Gain hfe Min 250 DC Current Gain hFE Max 550 Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 75 MHz Height 1.6 mm Length 6.5 mm Maximum DC Collector Current 3 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case SOT-223-4 Packaging Reel Packaging Cut Tape Packaging MouseReel Part # Aliases Pd - Power Dissipation 1 W Product Type BJTs - Bipolar Transistors Series NZT560A Technology SI Transistor Polarity NPN Unit Weight Width 3.56 mm