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PZT651T1G

PZT651T1G
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Specifikācijas

Kategorijas
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
80 V
Collector- Emitter Voltage VCEO Max
60 V
Collector-Emitter Saturation Voltage
0.5 V
Configuration
Single
Continuous Collector Current
2 A
DC Collector/Base Gain hfe Min
75
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
75 MHz
Height
1.57 mm
Length
6.5 mm
Maximum DC Collector Current
2 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
SOT-223-4
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
800 mW
Product Type
BJTs - Bipolar Transistors
Series
PZT651
Technology
SI
Transistor Polarity
NPN
Unit Weight
Width
3.5 mm

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Teşekkürler
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
goods very well received very good quality
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
fast delivery
Vairāk

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