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IGP10N60T

IGP10N60T
Attēli ir tikai norādei
Daļas numurs
IGP10N60T
Kategorijas
IGBT Transistors
RoHS
Datu lapas
Apraksts
IGBT Transistors LOW LOSS IGBT TECH 600V 10A
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Specifikācijas

Kategorijas
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Configuration
Single
Continuous Collector Current at 25 C
24 A
Gate-Emitter Leakage Current
100 nA
Height
9.25 mm
Length
10 mm
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Package / Case
TO-220-3
Packaging
Tube
Part # Aliases
Pd - Power Dissipation
110 W
Product Type
IGBT Transistors
Series
TRENCHSTOP IGBT
Technology
SI
Tradename
TRENCHSTOP
Unit Weight
Width
4.4 mm

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Quick delivery. Secure packing. Excellent product. Thank you
Takes 8 days to Japan. Good!
it is safe and sound all, thank you seller!
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Vairāk

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  • IGP10N60T Tehniskie dati

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