- Daļas numurs
- FF200R12KE4
- Kategorijas
- IGBT Modules
- RoHS
- Datu lapas
- Apraksts
- IGBT Modules IGBT-MODULE
FF200R12KE4
Attēli ir tikai norādei
Specifikācijas
- Kategorijas
- IGBT Modules
- Collector- Emitter Voltage VCEO Max
- 1200 V
- Collector-Emitter Saturation Voltage
- 2.05 V
- Configuration
- Dual
- Continuous Collector Current at 25 C
- 240 A
- Gate-Emitter Leakage Current
- 400 nA
- Height
- 30.5 mm
- Length
- 106.4 mm
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- Chassis Mount
- Package / Case
- 62 mm
- Packaging
- Tray
- Part # Aliases
- Pd - Power Dissipation
- 1100 W
- Product
- IGBT Silicon Modules
- Product Type
- IGBT Modules
- Technology
- SI
- Unit Weight
- Width
- 61.4 mm
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Jaunākās atsauksmes
Quickly came to CET, all in one package. Look at the rules
Earl Sault
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
สิทธิศักดิ์ วันดี
I received the product right, thank you very much 2018/12/03 ★★★★★
Haur Su
all is well. checked work. seller recommend.
Maurice E.
to seller thank you! all like the photo. not tried operation. seller store recommend.
Lysandre FOLLET
Jums var patikt
Cilvēki skatās FF200R12KE4, tad nopirka
FF200R12KE4 Jaunumi
03/14/2023
03/13/2023
03/13/2023
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