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D965-R

D965-R
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Specifikācijas

Kategorijas
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
42 V
Collector- Emitter Voltage VCEO Max
22 V
Collector-Emitter Saturation Voltage
0.35 V
Configuration
Single
Continuous Collector Current
5 A
DC Collector/Base Gain hfe Min
340
DC Current Gain hFE Max
950
Emitter- Base Voltage VEBO
6 V
Gain Bandwidth Product fT
-
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Package / Case
TO-92-3
Packaging
Bulk
Part # Aliases
Pd - Power Dissipation
750 mW
Product Type
BJTs - Bipolar Transistors
Technology
SI
Transistor Polarity
NPN
Unit Weight

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Teşekkürler
fast delivery, item as described, thanks!!
Quickly came to CET, all in one package. Look at the rules
Perfectly.
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Vairāk

Jums var patikt

D965-R
D965-R
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D965-R
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D965-R Jaunumi

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