Daļas numurs FZ400R12KE3 Kategorijas IGBT Modules RoHS Datu lapas FZ400R12KE3 Apraksts IGBT Modules 1200V 400A SINGLE
Kategorijas IGBT Modules Collector- Emitter Voltage VCEO Max 1200 V Collector-Emitter Saturation Voltage 1.7 V Configuration Single Continuous Collector Current at 25 C 650 A Gate-Emitter Leakage Current 400 nA Height 36.5 mm Length 106.4 mm Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 125 C Minimum Operating Temperature - 40 C Mounting Style Chassis Mount Package / Case 62 mm Packaging Tray Part # Aliases Pd - Power Dissipation 2250 W Product IGBT Silicon Modules Product Type IGBT Modules Technology SI Width 61.4 mm