Daļas numurs FZ600R12KS4 Kategorijas IGBT Modules RoHS Datu lapas FZ600R12KS4 Apraksts IGBT Modules N-CH 1.2KV 700A
Kategorijas IGBT Modules Collector- Emitter Voltage VCEO Max 1200 V Collector-Emitter Saturation Voltage 3.2 V Configuration Single Continuous Collector Current at 25 C 700 A Gate-Emitter Leakage Current 400 nA Height 36.5 mm Length 106.4 mm Maximum Gate Emitter Voltage +/- 20 V Maximum Operating Temperature + 125 C Minimum Operating Temperature - 40 C Mounting Style Chassis Mount Package / Case 62 mm Packaging Tray Part # Aliases Pd - Power Dissipation 3900 W Product IGBT Silicon Modules Product Type IGBT Modules Unit Weight Width 61.4 mm