Daļas numurs SQ4182EY-T1_GE3 Kategorijas MOSFET RoHS Datu lapas SQ4182EY-T1_GE3 Apraksts MOSFET N Ch 30Vds 20Vgs AEC-Q101 Qualified
Kategorijas MOSFET Channel Mode Enhancement Configuration Single Fall Time 8 ns Forward Transconductance - Min 107 S Id - Continuous Drain Current 32 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SO-8 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 7.1 W Product Type MOSFET Qg - Gate Charge 110 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 3.1 mOhms Rise Time 10 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 57 ns Typical Turn-On Delay Time 16 ns Unit Weight Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 1.5 V