Daļas numurs FZ900R12KE4 Kategorijas IGBT Modules RoHS Datu lapas FZ900R12KE4 Apraksts IGBT Modules 1200V 900A
Kategorijas IGBT Modules Collector- Emitter Voltage VCEO Max 1200 V Collector-Emitter Saturation Voltage 2.1 V Continuous Collector Current at 25 C 900 A Gate-Emitter Leakage Current 400 nA Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 150 C Minimum Operating Temperature - 40 C Mounting Style Chassis Mount Packaging Tray Part # Aliases Pd - Power Dissipation 4300 W Product IGBT Silicon Modules Product Type IGBT Modules Technology SI