IGB10N60T

Attēli ir tikai norādei
Daļas numurs
IGB10N60T
Kategorijas
IGBT Transistors
RoHS
Datu lapas
Apraksts
IGBT Transistors Low Loss IGBT Trench Stop&Fieldstop Tech

Specifikācijas

Kategorijas
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Configuration
Single
Continuous Collector Current at 25 C
24 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
110 W
Product Type
IGBT Transistors
Series
TRENCHSTOP IGBT
Technology
SI
Tradename
TRENCHSTOP
Unit Weight

Jaunākās atsauksmes

Teşekkürler

Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!

Everything as it is written in the description of the same deductible prodovtsu deserved 5

Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

Saistītie atslēgvārdi IGB1

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