Daļas numurs MJ11032G Kategorijas Darlington Transistors RoHS Datu lapas MJ11032G Apraksts Darlington Transistors 50A 120V Bipolar Power NPN
Kategorijas Darlington Transistors Collector- Base Voltage VCBO 120 V Collector- Emitter Voltage VCEO Max 120 V Configuration Single Continuous Collector Current 50 A DC Collector/Base Gain hfe Min 1000 DC Current Gain hFE Max 18000 Emitter- Base Voltage VEBO 5 V Height 8.51 mm Length 38.86 mm Maximum DC Collector Current 50 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Package / Case TO-204-2 (TO-3) Packaging Tray Pd - Power Dissipation 300 W Product Type Darlington Transistors Series MJ11032 Transistor Polarity NPN Unit Weight Width 26.67 mm