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FZ800R12KS4_B2

FZ800R12KS4_B2
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Specifikācijas

Kategorijas
IGBT Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
3.7 V
Configuration
Dual
Continuous Collector Current at 25 C
1200 A
Gate-Emitter Leakage Current
400 nA
Height
38 mm
Length
140 mm
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
IHM130
Packaging
Tray
Part # Aliases
Pd - Power Dissipation
7.6 kW
Product
IGBT Silicon Modules
Product Type
IGBT Modules
Technology
SI
Width
130 mm

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
all exactly and work. радиолюбителя useful set to, thank you)
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Works. Recommend
the photo in comparison with cheap. Delivery fast
The timer is running. 10 PCS. Packed properly.
Vairāk

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