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IGLD60R070D1AUMA1

IGLD60R070D1AUMA1
Attēli ir tikai norādei
Daļas numurs
IGLD60R070D1AUMA1
Kategorijas
MOSFET
RoHS
Datu lapas
Apraksts
MOSFET 600V CoolGaN Power Transistor
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Specifikācijas

Kategorijas
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
13 ns
Id - Continuous Drain Current
15 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
PG-LSON-8
Packaging
Cut Tape
Packaging
Reel
Part # Aliases
Pd - Power Dissipation
114 W
Product Type
MOSFET
Qg - Gate Charge
5.8 nC
Rds On - Drain-Source Resistance
70 mOhms
Rise Time
9 ns
Technology
GaN
Tradename
CoolGaN
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
15 ns
Typical Turn-On Delay Time
15 ns
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
0.9 V

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Very good!
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
packed pretty good, all is ok,-seller.
Thank You all fine, packed very well
Perfectly.
Vairāk

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Saistītie atslēgvārdi IGLD

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