Daļas numurs FF1400R12IP4 Kategorijas IGBT Modules RoHS Datu lapas FF1400R12IP4 Apraksts IGBT Modules N-CH 1.2KV 1.4KA
Kategorijas IGBT Modules Collector- Emitter Voltage VCEO Max 1200 V Collector-Emitter Saturation Voltage 2.05 V Configuration Dual Continuous Collector Current at 25 C 1400 A Gate-Emitter Leakage Current 400 nA Height 38 mm Length 250 mm Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 150 C Minimum Operating Temperature - 40 C Mounting Style Chassis Mount Package / Case PRIME3 Packaging Tray Part # Aliases Pd - Power Dissipation 7.65 kW Product IGBT Silicon Modules Product Type IGBT Modules Technology SI Width 89 mm