Daļas numurs FF1000R17IE4 Kategorijas IGBT Modules RoHS Datu lapas FF1000R17IE4 Apraksts IGBT Modules N-CH 1.7KV 1.39KA
Kategorijas IGBT Modules Collector- Emitter Voltage VCEO Max 1700 V Collector-Emitter Saturation Voltage 2.45 V Configuration Dual Continuous Collector Current at 25 C 1390 A Gate-Emitter Leakage Current 400 nA Height 38 mm Length 250 mm Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 150 C Minimum Operating Temperature - 40 C Mounting Style Chassis Mount Package / Case PRIME3 Packaging Tray Part # Aliases Pd - Power Dissipation 6.25 kW Product IGBT Silicon Modules Product Type IGBT Modules Technology SI Unit Weight Width 89 mm