Daļas numurs FF1800R17IP5 Kategorijas IGBT Modules RoHS Datu lapas FF1800R17IP5 Apraksts IGBT Modules
Kategorijas IGBT Modules Collector- Emitter Voltage VCEO Max 1700 V Collector-Emitter Saturation Voltage 1.75 V Configuration Dual Continuous Collector Current at 25 C 1800 A Gate-Emitter Leakage Current 400 nA Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style Chassis Mount Package / Case PRIME3 Packaging Tray Part # Aliases Pd - Power Dissipation 8.95 kW Product IGBT Silicon Modules Product Type IGBT Modules Technology SI