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FB30R06W1E3

FB30R06W1E3
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Specifikācijas

Kategorijas
IGBT Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
2 V
Configuration
HEX
Continuous Collector Current at 25 C
39 A
Gate-Emitter Leakage Current
400 nA
Height
12 mm
Length
62.8 mm
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Mounting Style
Chassis Mount
Package / Case
EASY1B
Packaging
Tray
Part # Aliases
Pd - Power Dissipation
115 W
Product
IGBT Silicon Modules
Product Type
IGBT Modules
Technology
SI
Unit Weight
Width
33.8 mm

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Quickly came to CET, all in one package. Look at the rules
packed pretty good, all is ok,-seller.
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Vairāk

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FB30R06W1E3
FB30R06W1E3
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FB30R06W1E3
FB30R06W1E3
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FB30R06W1E3 Jaunumi

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