- Daļas numurs
- IKA15N65F5
- Kategorijas
- IGBT Transistors
- RoHS
- Datu lapas
- Apraksts
- IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
IKA15N65F5
Attēli ir tikai norādei
Specifikācijas
- Kategorijas
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.6 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 14 A
- Gate-Emitter Leakage Current
- 100 nA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- Through Hole
- Package / Case
- TO-220-3 FP
- Packaging
- Tube
- Part # Aliases
- Pd - Power Dissipation
- 33.3 W
- Product Type
- IGBT Transistors
- Series
- TRENCHSTOP 5 F5
- Technology
- SI
- Tradename
- TRENCHSTOP
- Unit Weight
Porduct kategorija
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Jaunākās atsauksmes
goods very well received very good quality
Fabrice Cubaynes
Takes 8 days to Japan. Good!
Alex Fragkos
packed pretty good, all is ok,-seller.
Julianah Yungkim
Thank You all fine, packed very well
Ulrich Bundke
Decent quality, not минвелл certainly, but enough decent
TEIXEIRA
Jums var patikt
Cilvēki skatās IKA15N65F5, tad nopirka
IKA15N65F5 Jaunumi
03/14/2023
03/13/2023
03/13/2023
Saistītie atslēgvārdi IKA1
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