- Daļas numurs
- J113
- Kategorijas
- JFET
- RoHS
- Datu lapas
- Apraksts
- JFET N-Ch JFET -35V -3Vds 50mA 360mW 3.27mW
J113
Attēli ir tikai norādei
Specifikācijas
- Kategorijas
- JFET
- Configuration
- Single
- Drain-Source Current at Vgs=0
- 2 mA
- Gate-Source Cutoff Voltage
- - 3 V
- Mounting Style
- Through Hole
- Package / Case
- TO-92-3
- Packaging
- Bulk
- Pd - Power Dissipation
- 360 mW
- Rds On - Drain-Source Resistance
- 100 Ohms
- Technology
- SI
- Transistor Polarity
- N-Channel
- Type
- JFET
- Vgs - Gate-Source Breakdown Voltage
- - 35 V
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Jaunākās atsauksmes
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Brenda Gfeller
Works. Recommend
Rajiv
Packed medium, in transit could поврелиться. But since it's safe, work perfectly
Matt Hookway
and whole all right. the features no more функционалу check.
Julian Krockenberger
Still not tasted, looks good. Fast Shipping, very good Price. Like again
Nils Dorigoni
J113 Jaunumi
03/14/2023
03/13/2023
03/13/2023
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