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SQ1539EH-T1_GE3

SQ1539EH-T1_GE3
Attēli ir tikai norādei
Daļas numurs
SQ1539EH-T1_GE3
Kategorijas
MOSFET
RoHS
Datu lapas
Apraksts
MOSFET N Ch 30Vds 20Vgs AEC-Q101 Qualified
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Specifikācijas

Kategorijas
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
32 ns, 17 ns
Forward Transconductance - Min
1.2 S, 0.6 S
Height
1 mm
Id - Continuous Drain Current
850 mA
Length
2.1 mm
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
SOT-363-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
1.5 W
Product Type
MOSFET
Qg - Gate Charge
1.4 nC, 1.6 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
210 mOhms, 788 mOhms
Rise Time
18 ns, 39 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel, P-Channel
Transistor Type
1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time
8 ns, 10 ns
Typical Turn-On Delay Time
3 ns, 4 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1 V, 2.6 V
Width
1.25 mm

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
goods very well received very good quality
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Hello! Order received, very happy. Thank you very much!
Looks good
all is well. checked work. seller recommend.
Vairāk

Jums var patikt

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Saistītie atslēgvārdi SQ15

  • SQ1539EH-T1_GE3 Integrēta
  • SQ1539EH-T1_GE3 RoHS
  • SQ1539EH-T1_GE3 PDF datu lapa
  • SQ1539EH-T1_GE3 Datu lapas
  • SQ1539EH-T1_GE3 Daļa. \ T
  • SQ1539EH-T1_GE3 Pirkt
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  • SQ1539EH-T1_GE3 PDF
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  • SQ1539EH-T1_GE3 Lejupielādēt PDF failu
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  • SQ1539EH-T1_GE3 Bez svina
  • SQ1539EH-T1_GE3 Specifikācija
  • SQ1539EH-T1_GE3 Karstie piedāvājumi
  • SQ1539EH-T1_GE3 Break cena
  • SQ1539EH-T1_GE3 Tehniskie dati

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