UF28100V

Attēli ir tikai norādei
Daļas numurs
UF28100V
Kategorijas
RF MOSFET Transistors
RoHS
Datu lapas
Apraksts
RF MOSFET Transistors 100-500MHz 100Watts 28Volt 10dB

Specifikācijas

Kategorijas
RF MOSFET Transistors
Configuration
Dual
Forward Transconductance - Min
1.5 s
Gain
10 dB
Id - Continuous Drain Current
12 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Operating Frequency
100 MHz to 500 MHz
Output Power
100 W
Package / Case
744A-01
Packaging
Tray
Pd - Power Dissipation
250 W
Product Type
RF MOSFET Transistors
Technology
SI
Transistor Polarity
N-Channel
Type
RF Power MOSFET
Vds - Drain-Source Breakdown Voltage
65 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
6 V

Jaunākās atsauksmes

thanks for resending, this item is good !

goods very well received very good quality

Takes 8 days to Japan. Good!

packed pretty good, all is ok,-seller.

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

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