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IGO60R070D1AUMA1

IGO60R070D1AUMA1
Attēli ir tikai norādei
Daļas numurs
IGO60R070D1AUMA1
Kategorijas
MOSFET
RoHS
Datu lapas
Apraksts
MOSFET 600V CoolGaN Power Transistor
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Specifikācijas

Kategorijas
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
10 ns
Id - Continuous Drain Current
31 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Moisture Sensitive
Yes
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
PG-DSO-20
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
125 W
Product Type
MOSFET
Qg - Gate Charge
5.8 nC
Rds On - Drain-Source Resistance
70 mOhms
Rise Time
7 ns
Technology
GaN
Tradename
CoolGaN
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
11 ns
Typical Turn-On Delay Time
13 ns
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
0.9 V

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
it is safe and sound all, thank you seller!
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Vairāk

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IGO60R070D1AUMA1
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