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IKB30N65EH5ATMA1

IKB30N65EH5ATMA1
Attēli ir tikai norādei
Daļas numurs
IKB30N65EH5ATMA1
Kategorijas
IGBT Transistors
RoHS
Datu lapas
Apraksts
IGBT Transistors Infineon s 650 V, 30 A hard-switching TRENCHSTOP 5 IGBT in a TO263 D2Pak package, redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for h
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Specifikācijas

Kategorijas
IGBT Transistors
Collector- Emitter Voltage VCEO Max
650 V
Collector-Emitter Saturation Voltage
1.65 V
Configuration
Single
Continuous Collector Current at 25 C
55 A
Continuous Collector Current Ic Max
55 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
188 W
Product Type
IGBT Transistors
Series
650V TRENCHSTOP 5
Technology
SI
Tradename
TRENCHSTOP

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Отличный продавец . Рекомендую.+++
Perfectly.
Fast shippng. Good quality. I recomend this seller.
Works. Recommend
the photo in comparison with cheap. Delivery fast
Vairāk

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