Daļas numurs FZ750R65KE3 Kategorijas IGBT Modules RoHS Datu lapas FZ750R65KE3 Apraksts IGBT Modules IGBT 6500V 750A
Kategorijas IGBT Modules Collector- Emitter Voltage VCEO Max 6500 V Collector-Emitter Saturation Voltage 3 V Configuration Single Continuous Collector Current at 25 C 750 A Gate-Emitter Leakage Current 400 nA Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 125 C Minimum Operating Temperature - 50 C Mounting Style Chassis Mount Package / Case Module Packaging Tray Part # Aliases Pd - Power Dissipation 3000 kW Product IGBT Silicon Modules Product Type IGBT Modules Technology SI