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XP161A1355PR-G

XP161A1355PR-G
Attēli ir tikai norādei
Daļas numurs
XP161A1355PR-G
Kategorijas
MOSFET
RoHS
Datu lapas
Apraksts
MOSFET Power MOSFET, 20V, 4A, N-Type, SOT-89
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Specifikācijas

Kategorijas
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
45 ns
Id - Continuous Drain Current
4 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-89-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
2 W
Product Type
MOSFET
Rds On - Drain-Source Resistance
150 mOhms
Rise Time
15 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
85 ns
Typical Turn-On Delay Time
10 ns
Vds - Drain-Source Breakdown Voltage
20 V
Vgs - Gate-Source Voltage
8 V
Vgs th - Gate-Source Threshold Voltage
500 mV

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Thanks for your feedback!
Takes 8 days to Japan. Good!
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Everything is fine!
Great product. Arrived ahead of time. Thank you
Vairāk

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