Daļas numurs IF3602 Kategorijas JFET RoHS Datu lapas IF3602 Apraksts JFET Dual JFET N-Ch -20V 10mA 300mW 4mW
Kategorijas JFET Configuration Dual Drain-Source Current at Vgs=0 30 mA Forward Transconductance - Min 750 mS Gate-Source Cutoff Voltage - 3 V Id - Continuous Drain Current 500 pA Mounting Style Through Hole Package / Case TO-78-8 Packaging Bulk Pd - Power Dissipation 300 mW Series IF360 Technology SI Transistor Polarity N-Channel Type JFET Unit Weight Vds - Drain-Source Breakdown Voltage 10 V Vgs - Gate-Source Breakdown Voltage - 20 V