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RU1E002SPTCL

RU1E002SPTCL
Attēli ir tikai norādei
Daļas numurs
RU1E002SPTCL
Kategorijas
MOSFET
RoHS
Datu lapas
Apraksts
MOSFET 4V Drive Pch MOSFET Drive Pch
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Specifikācijas

Kategorijas
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
23 ns
Id - Continuous Drain Current
250 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-323FL-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
200 mW
Product Type
MOSFET
Rds On - Drain-Source Resistance
900 mOhms
Rise Time
6 ns
Series
RU1E002SP
Technology
SI
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
20 ns
Typical Turn-On Delay Time
4 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
goods very well received very good quality
Received, Fast shipping, not checked yet
packed pretty good, all is ok,-seller.
High Quality driver, works excellent. It came to Moscow for 7 days.
The goods are OK, thank you dealers.
Vairāk

Jums var patikt

RU1E002SPTCL
RU1E002SPTCL
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RU1E002SPTCL
RU1E002SPTCL
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RU1E002SPTCL Jaunumi

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