BS107PSTZ

Attēli ir tikai norādei
Daļas numurs
BS107PSTZ
Kategorijas
MOSFET
RoHS
Datu lapas
Apraksts
MOSFET N-Chnl 200V

Specifikācijas

Kategorijas
MOSFET
Channel Mode
Enhancement
Configuration
Single
Id - Continuous Drain Current
120 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-92-3
Packaging
Ammo Pack
Pd - Power Dissipation
500 mW (1/2 W)
Product
MOSFET Small Signal
Product Type
MOSFET
Rds On - Drain-Source Resistance
15 Ohms
Series
BS107
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Type
FET
Unit Weight
Vds - Drain-Source Breakdown Voltage
200 V
Vgs - Gate-Source Voltage
20 V

Jaunākās atsauksmes

all exactly and work. радиолюбителя useful set to, thank you)

Quickly came to CET, all in one package. Look at the rules

Hello! Order received, very happy. Thank you very much!

Shipping a little 1 weeks, normal packing, the procedure is complete.

Works. Recommend

Saistītie atslēgvārdi BS10

  • BS107PSTZ Integrēta
  • BS107PSTZ RoHS
  • BS107PSTZ PDF datu lapa
  • BS107PSTZ Datu lapas
  • BS107PSTZ Daļa. \ T
  • BS107PSTZ Pirkt
  • BS107PSTZ Izplatītājs
  • BS107PSTZ PDF
  • BS107PSTZ Komponents
  • BS107PSTZ IC
  • BS107PSTZ Lejupielādēt PDF failu
  • BS107PSTZ Lejupielādēt datu lapu
  • BS107PSTZ Piegāde
  • BS107PSTZ Piegādātājs
  • BS107PSTZ Cena
  • BS107PSTZ Datu lapas
  • BS107PSTZ Attēls
  • BS107PSTZ Bilde
  • BS107PSTZ Inventarizācija
  • BS107PSTZ Krājumi
  • BS107PSTZ Oriģināls
  • BS107PSTZ Lētākais
  • BS107PSTZ Teicami
  • BS107PSTZ Bez svina
  • BS107PSTZ Specifikācija
  • BS107PSTZ Karstie piedāvājumi
  • BS107PSTZ Break cena
  • BS107PSTZ Tehniskie dati