Daļas numurs ZDX050N50 Kategorijas MOSFET RoHS Datu lapas ZDX050N50 Apraksts MOSFET 10V Drive Nch MOSFET
Kategorijas MOSFET Channel Mode Enhancement Configuration Single Fall Time 22 ns Forward Transconductance - Min 4 s Height 4.8 mm Id - Continuous Drain Current 5 A Length 15.4 mm Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220FP-3 Packaging Reel Packaging Cut Tape Part # Aliases Pd - Power Dissipation 40 W Product MOSFET Product Type MOSFET Qg - Gate Charge 14 nC Rds On - Drain-Source Resistance 1.5 Ohms Rise Time 12 ns Series ZDX050N50 Technology SI Transistor Polarity N-Channel Transistor Type 1 N-Channel Type Power MOSFET Typical Turn-Off Delay Time 38 ns Typical Turn-On Delay Time 20 ns Unit Weight Vds - Drain-Source Breakdown Voltage 500 V Vgs - Gate-Source Voltage 30 V Vgs th - Gate-Source Threshold Voltage 2.5 V Width 10.3 mm