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XP263N1001TR-G

XP263N1001TR-G
Attēli ir tikai norādei
Daļas numurs
XP263N1001TR-G
Kategorijas
MOSFET
RoHS
Datu lapas
Apraksts
MOSFET General-purpose N-channel MOSFET , 60V / 1A / SOT-23
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Specifikācijas

Kategorijas
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
10 ns
Id - Continuous Drain Current
1 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-23-3
Packaging
MouseReel
Packaging
Reel
Packaging
Cut Tape
Pd - Power Dissipation
0.4 W
Product Type
MOSFET
Qg - Gate Charge
3.6 nC
Rds On - Drain-Source Resistance
250 mOhms
Rise Time
8 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
35 ns
Typical Turn-On Delay Time
10 ns
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
1.1 V

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
My package arrived wet, not know where occurs this fact, but working all right
all exactly and work. радиолюбителя useful set to, thank you)
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Works. Find the price of this product is very good
Shipping a little 1 weeks, normal packing, the procedure is complete.
Vairāk

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