- Daļas numurs
- UF28150J
- Kategorijas
- RF MOSFET Transistors
- RoHS
- Datu lapas
- Apraksts
- RF MOSFET Transistors 100-500MHz 150Watts 28Volt Gain 8dB
UF28150J
Attēli ir tikai norādei
Specifikācijas
- Kategorijas
- RF MOSFET Transistors
- Configuration
- Dual
- Gain
- 8 dB
- Id - Continuous Drain Current
- 16 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 65 C
- Mounting Style
- SMD/SMT
- Operating Frequency
- 100 MHz to 500 MHz
- Output Power
- 150 W
- Package / Case
- 375-04
- Packaging
- Tray
- Pd - Power Dissipation
- 389 W
- Product Type
- RF MOSFET Transistors
- Technology
- SI
- Transistor Polarity
- N-Channel
- Type
- RF Power MOSFET
- Vds - Drain-Source Breakdown Voltage
- 65 V
- Vgs - Gate-Source Voltage
- 20 V
- Vgs th - Gate-Source Threshold Voltage
- 6 V
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Jaunākās atsauksmes
everything as it is written in the description of the same deductible prodovtsu deserved
Aleksov
packed pretty good, all is ok,-seller.
Julianah Yungkim
Thank You all fine, packed very well
Ulrich Bundke
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Sergio Garcia Carreon
Decent quality, not минвелл certainly, but enough decent
TEIXEIRA
UF28150J Jaunumi
03/14/2023
03/13/2023
03/13/2023
Saistītie atslēgvārdi UF28
- UF28150J Integrēta
- UF28150J RoHS
- UF28150J PDF datu lapa
- UF28150J Datu lapas
- UF28150J Daļa. \ T
- UF28150J Pirkt
- UF28150J Izplatītājs
- UF28150J PDF
- UF28150J Komponents
- UF28150J IC
- UF28150J Lejupielādēt PDF failu
- UF28150J Lejupielādēt datu lapu
- UF28150J Piegāde
- UF28150J Piegādātājs
- UF28150J Cena
- UF28150J Datu lapas
- UF28150J Attēls
- UF28150J Bilde
- UF28150J Inventarizācija
- UF28150J Krājumi
- UF28150J Oriģināls
- UF28150J Lētākais
- UF28150J Teicami
- UF28150J Bez svina
- UF28150J Specifikācija
- UF28150J Karstie piedāvājumi
- UF28150J Break cena
- UF28150J Tehniskie dati
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