- Daļas numurs
- GH04850B2G
- Kategorijas
- Laser Diodes
- RoHS
- Datu lapas
- Apraksts
- Laser Diodes Laser Diode
GH04850B2G
Specifikācijas
- Kategorijas
- Laser Diodes
- Differential Efficiency
- 0.8 mW/mA
- If - Forward Current
- 105 mA
- Maximum Operating Temperature
- + 60 C
- Minimum Operating Temperature
- - 10 C
- Output Power
- 55 mW
- Packaging
- Tray
- Product Type
- Laser Diodes
- Vf - Forward Voltage
- 6 V
- Vr - Reverse Voltage
- 2 V
- Wavelength
- 487 nm
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Jaunākās atsauksmes
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
Paolo Giazzi
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Eitan Hammami
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Boris Arshinov
Takes 8 days to Japan. Good!
Alex Fragkos
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Andrzej Piwowarczyk
Jums var patikt
Cilvēki skatās GH04850B2G, tad nopirka
GH04850B2G Jaunumi
03/14/2023
03/13/2023
03/13/2023
Saistītie atslēgvārdi GH04
- GH04850B2G Integrēta
- GH04850B2G RoHS
- GH04850B2G PDF datu lapa
- GH04850B2G Datu lapas
- GH04850B2G Daļa. \ T
- GH04850B2G Pirkt
- GH04850B2G Izplatītājs
- GH04850B2G PDF
- GH04850B2G Komponents
- GH04850B2G IC
- GH04850B2G Lejupielādēt PDF failu
- GH04850B2G Lejupielādēt datu lapu
- GH04850B2G Piegāde
- GH04850B2G Piegādātājs
- GH04850B2G Cena
- GH04850B2G Datu lapas
- GH04850B2G Attēls
- GH04850B2G Bilde
- GH04850B2G Inventarizācija
- GH04850B2G Krājumi
- GH04850B2G Oriģināls
- GH04850B2G Lētākais
- GH04850B2G Teicami
- GH04850B2G Bez svina
- GH04850B2G Specifikācija
- GH04850B2G Karstie piedāvājumi
- GH04850B2G Break cena
- GH04850B2G Tehniskie dati
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