Daļas numurs FF23MR12W1M1B11BOMA1 Kategorijas Discrete Semiconductor Modules RoHS Datu lapas FF23MR12W1M1B11BOMA1 Apraksts Discrete Semiconductor Modules
Kategorijas Discrete Semiconductor Modules Configuration Dual Fall Time 12 ns Id - Continuous Drain Current 50 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 40 C Mounting Style Press Fit Operating Supply Voltage - Package / Case Module Packaging Tray Part # Aliases Pd - Power Dissipation 20 mW Product Power MOSFET Modules Product Type Discrete Semiconductor Modules Rds On - Drain-Source Resistance 23 mOhms Rise Time 10 ns Tradename CoolSiC Transistor Polarity N-Channel Type EasyDUAL Module Typical Turn-Off Delay Time 43.5 ns Typical Turn-On Delay Time 12 ns Vds - Drain-Source Breakdown Voltage 1200 V Vf - Forward Voltage 4 V Vgs - Gate-Source Voltage - 10 V, 20 V Vgs th - Gate-Source Threshold Voltage 3.5 V