Daļas numurs MJ15001G Kategorijas Bipolar Transistors - BJT RoHS Datu lapas MJ15001G Apraksts Bipolar Transistors - BJT 15A 140V 200W NPN
Kategorijas Bipolar Transistors - BJT Collector- Base Voltage VCBO 140 V Collector- Emitter Voltage VCEO Max 140 V Collector-Emitter Saturation Voltage 1 V Configuration Single Continuous Collector Current 15 A DC Collector/Base Gain hfe Min 25 Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 2 MHz Height 8.51 mm Length 39.37 mm Maximum DC Collector Current 15 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 65 C Mounting Style Through Hole Package / Case TO-204-2 Packaging Tray Pd - Power Dissipation 200 W Product Type BJTs - Bipolar Transistors Series MJ15001 Technology SI Transistor Polarity NPN Width 26.67 mm