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MJ802G

MJ802G
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Specifikācijas

Kategorijas
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
100 V
Collector- Emitter Voltage VCEO Max
90 V
Collector-Emitter Saturation Voltage
0.8 V
Configuration
Single
Continuous Collector Current
30 A
DC Collector/Base Gain hfe Min
25
Emitter- Base Voltage VEBO
4 V
Gain Bandwidth Product fT
2 MHz
Height
8.51 mm
Length
39.37 mm
Maximum DC Collector Current
30 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Package / Case
TO-204-2
Packaging
Tray
Pd - Power Dissipation
200 W
Product Type
BJTs - Bipolar Transistors
Series
MJ802
Technology
SI
Transistor Polarity
NPN
Unit Weight
Width
26.67 mm

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
goods very well received very good quality
fast delivery, item as described, thanks!!
Received, Fast shipping, not checked yet
Quick delivery. Secure packing. Excellent product. Thank you
it is safe and sound all, thank you seller!
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MJ802G Jaunumi

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