Daļas numurs MJ21196G Kategorijas Bipolar Transistors - BJT RoHS Datu lapas MJ21196G Apraksts Bipolar Transistors - BJT 16A 250V 250W NPN
Kategorijas Bipolar Transistors - BJT Collector- Base Voltage VCBO 400 V Collector- Emitter Voltage VCEO Max 250 V Collector-Emitter Saturation Voltage 1.4 V Configuration Single Continuous Collector Current 16 A DC Collector/Base Gain hfe Min 25 Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 4 MHz Height 8.51 mm Length 39.37 mm Maximum DC Collector Current 16 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 65 C Mounting Style Through Hole Package / Case TO-204-2 Packaging Tray Pd - Power Dissipation 250 W Product Type BJTs - Bipolar Transistors Series MJ21196 Technology SI Transistor Polarity NPN Width 26.67 mm