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PZTA42,115

PZTA42,115
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Specifikācijas

Kategorijas
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
300 V
Collector- Emitter Voltage VCEO Max
300 V
Configuration
Single
DC Collector/Base Gain hfe Min
25 at 1 mA, 10 V, 40 at 10 mA, 10 V, 40 at 30 mA, 10 V
DC Current Gain hFE Max
25 at 1 mA, 10 V
Emitter- Base Voltage VEBO
6 V
Gain Bandwidth Product fT
50 MHz
Height
1.7 mm
Length
6.7 mm
Maximum DC Collector Current
0.1 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
SOT-223-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
1200 mW
Product Type
BJTs - Bipolar Transistors
Qualification
AEC-Q101
Technology
SI
Transistor Polarity
NPN
Unit Weight
Width
3.7 mm

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
goods very well received very good quality
it is safe and sound all, thank you seller!
Everything is excellent! recommend this seller!
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
fast delivery
Vairāk

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