Daļas numurs ZDT694TA Kategorijas Bipolar Transistors - BJT RoHS Datu lapas ZDT694TA Apraksts Bipolar Transistors - BJT Dual NPN Medium Power
Kategorijas Bipolar Transistors - BJT Collector- Base Voltage VCBO 120 V Collector- Emitter Voltage VCEO Max 120 V Collector-Emitter Saturation Voltage 0.5 V Configuration Dual DC Collector/Base Gain hfe Min 500 at 100 mA, 2 V, 400 at 200 mA, 2 V, 150 at 400 mA, 2 V DC Current Gain hFE Max 500 Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 130 MHz Height 1.6 mm Length 6.7 mm Maximum DC Collector Current 0.5 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case SM-8 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 2.75 W Product Type BJTs - Bipolar Transistors Series ZDT694 Technology SI Transistor Polarity NPN Width 3.7 mm