Daļas numurs IFCM30U65GDXKMA1 Kategorijas IGBT Modules RoHS Datu lapas IFCM30U65GDXKMA1 Apraksts IGBT Modules IFPS MODULES
Kategorijas IGBT Modules Collector- Emitter Voltage VCEO Max 650 V Collector-Emitter Saturation Voltage 1.75 V Configuration 3-Phase Continuous Collector Current at 25 C 30 A Gate-Emitter Leakage Current 1 mA Maximum Gate Emitter Voltage - Maximum Operating Temperature + 100 C Minimum Operating Temperature - 40 C Mounting Style Through Hole Package / Case MDIP-24 Packaging Tube Part # Aliases Pd - Power Dissipation 60.4 W Product IGBT Silicon Modules Product Type IGBT Modules Series CIPOS Mini Technology SI Tradename CIPOS