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IKQ40N120CT2XKSA1

IKQ40N120CT2XKSA1
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Specifikācijas

Kategorijas
IGBT Transistors
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.75 V
Configuration
Single
Continuous Collector Current at 25 C
80 A
Continuous Collector Current Ic Max
80 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Package / Case
TO247-3-46
Packaging
Tube
Part # Aliases
Pd - Power Dissipation
500 W
Product Type
IGBT Transistors
Technology
SI
Unit Weight

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
everything as it is written in the description of the same deductible prodovtsu deserved
Received, Fast shipping, not checked yet
Quick delivery. Secure packing. Excellent product. Thank you
all exactly and work. радиолюбителя useful set to, thank you)
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Vairāk

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IKQ40N120CH3XKSA1
IKQ40N120CH3XKSA1
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IKQ40N120CT2XKSA1
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IKQ40N120CH3XKSA1
IKQ40N120CH3XKSA1
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IKQ40N120CT2XKSA1
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IKQ40N120CT2XKSA1 Jaunumi

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