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MJD112-1G

MJD112-1G
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Specifikācijas

Kategorijas
Darlington Transistors
Collector- Base Voltage VCBO
100 V
Collector- Emitter Voltage VCEO Max
100 V
Configuration
Single
Continuous Collector Current
2 A
DC Collector/Base Gain hfe Min
200, 500, 1000
Emitter- Base Voltage VEBO
5 V
Height
6.22 mm
Length
6.73 mm
Maximum Collector Cut-off Current
20 uA
Maximum DC Collector Current
2 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
TO-252-3 (DPAK)
Packaging
Tube
Pd - Power Dissipation
20 W
Product Type
Darlington Transistors
Series
MJD112
Transistor Polarity
NPN
Unit Weight
Width
2.38 mm

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Perfectly.
The goods are OK, thank you dealers.
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
Vairāk

Jums var patikt

MJD112-1G
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Cilvēki skatās MJD112-1G, tad nopirka

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MJD112-TP
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Saistītie atslēgvārdi MJD1

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  • MJD112-1G PDF datu lapa
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  • MJD112-1G Lejupielādēt PDF failu
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  • MJD112-1G Specifikācija
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