Daļas numurs IKB40N65ES5ATMA1 Kategorijas IGBT Transistors RoHS Datu lapas IKB40N65ES5ATMA1 Apraksts IGBT Transistors 40A 650V TRENCHSTOP 5 medium speed S5 IGBT copacked with 40A Rapid 1 diode
Kategorijas IGBT Transistors Collector- Emitter Voltage VCEO Max 650 V Collector-Emitter Saturation Voltage 1.35 V Configuration Single Continuous Collector Current at 25 C 79 A Continuous Collector Current Ic Max 79 A Gate-Emitter Leakage Current 100 nA Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style SMD/SMT Package / Case TO-263-3 Packaging Reel Packaging Cut Tape Part # Aliases Pd - Power Dissipation 230 W Product Type IGBT Transistors Series TRENCHSTOP 5 Technology SI