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IKW15N120BH6XKSA1

IKW15N120BH6XKSA1
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Specifikācijas

Kategorijas
IGBT Transistors
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.9 V
Configuration
Single
Continuous Collector Current at 25 C
30 A
Continuous Collector Current Ic Max
30 A
Gate-Emitter Leakage Current
600 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Package / Case
TO-247-3
Packaging
Tube
Part # Aliases
Pd - Power Dissipation
200 W
Product Type
IGBT Transistors
Series
IGBT6
Technology
SI
Tradename
TRENCHSTOP

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Takes 8 days to Japan. Good!
Yes, they are all here. :)
Hello! Order received, very happy. Thank you very much!
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Shipping a little 1 weeks, normal packing, the procedure is complete.
Vairāk

Jums var patikt

IKW15N120BH6XKSA1
IKW15N120BH6XKSA1
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IKW15N120H3
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IKW15N120H3FKSA1
IKW15N120H3FKSA1
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IKW15N120T2
IKW15N120T2
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Cilvēki skatās IKW15N120BH6XKSA1, tad nopirka

IKW15N120BH6XKSA1
IKW15N120BH6XKSA1
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IKW15N120H3
IKW15N120H3
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IKW15N120H3FKSA1
IKW15N120H3FKSA1
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IKW15N120T2
IKW15N120T2
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IKW15N120BH6XKSA1 Jaunumi

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Saistītie atslēgvārdi IKW1

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  • IKW15N120BH6XKSA1 Tehniskie dati

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