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IGD06N60TATMA1

IGD06N60TATMA1
Attēli ir tikai norādei
Daļas numurs
IGD06N60TATMA1
Kategorijas
IGBT Transistors
RoHS
Datu lapas
Apraksts
IGBT Transistors Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed
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Specifikācijas

Kategorijas
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Configuration
Single
Continuous Collector Current at 25 C
12 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-252-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
88 W
Product Type
IGBT Transistors
Series
TRENCHSTOP IGBT
Technology
SI
Tradename
TRENCHSTOP
Unit Weight

Porduct kategorija

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Jaunākās atsauksmes

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Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Hello! Order received, very happy. Thank you very much!
Decent quality, not минвелл certainly, but enough decent
Parcel received shook cool all 10 pieces is not checked check unsubscribe
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