- Daļas numurs
- IKP15N60T
- Kategorijas
- IGBT Transistors
- RoHS
- Datu lapas
- Apraksts
- IGBT Transistors LOW LOSS DuoPack 600V 15A
IKP15N60T
Attēli ir tikai norādei
Specifikācijas
- Kategorijas
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 1.5 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 26 A
- Gate-Emitter Leakage Current
- 100 nA
- Height
- 15.95 mm
- Length
- 10.36 mm
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- Through Hole
- Package / Case
- TO-220-3
- Packaging
- Tube
- Part # Aliases
- Pd - Power Dissipation
- 110 W
- Product Type
- IGBT Transistors
- Series
- TRENCHSTOP IGBT
- Technology
- SI
- Tradename
- TRENCHSTOP
- Unit Weight
- Width
- 4.57 mm
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Jaunākās atsauksmes
Thanks for your feedback!
Anna Grden
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Boris Arshinov
Perfectly.
Sensofar Tech, SL
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Sergio Garcia Carreon
Works. Find the price of this product is very good
Maxim Krasnov
Jums var patikt
Cilvēki skatās IKP15N60T, tad nopirka
IKP15N60T Jaunumi
03/14/2023
03/13/2023
03/13/2023
Saistītie atslēgvārdi IKP1
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- IKP15N60T Lejupielādēt PDF failu
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- IKP15N60T Cena
- IKP15N60T Datu lapas
- IKP15N60T Attēls
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- IKP15N60T Inventarizācija
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- IKP15N60T Bez svina
- IKP15N60T Specifikācija
- IKP15N60T Karstie piedāvājumi
- IKP15N60T Break cena
- IKP15N60T Tehniskie dati
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