IGP06N60TXKSA1

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Specifikācijas

Kategorijas
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Configuration
Single
Continuous Collector Current at 25 C
12 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-252-3
Packaging
Tube
Part # Aliases
Pd - Power Dissipation
88 W
Product Type
IGBT Transistors
Series
TRENCHSTOP IGBT
Technology
SI
Tradename
TRENCHSTOP

Jaunākās atsauksmes

Properly packed, not damaged. Works well, voltage levels are stable. Recommend.

goods very well received very good quality

Takes 8 days to Japan. Good!

Hello! Order received, very happy. Thank you very much!

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

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