- Daļas numurs
- IKP08N65F5
- Kategorijas
- IGBT Transistors
- RoHS
- Datu lapas
- Apraksts
- IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
IKP08N65F5
Attēli ir tikai norādei
Specifikācijas
- Kategorijas
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.6 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 18 A
- Gate-Emitter Leakage Current
- 100 nA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- Through Hole
- Package / Case
- TO-220-3
- Packaging
- Tube
- Part # Aliases
- Pd - Power Dissipation
- 70 W
- Product Type
- IGBT Transistors
- Series
- TRENCHSTOP 5 F5
- Technology
- SI
- Tradename
- TRENCHSTOP
- Unit Weight
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Jaunākās atsauksmes
Thanks for your feedback!
Emanuela Fe
Teşekkürler
Ashir Hussain
Quick delivery. Secure packing. Excellent product. Thank you
BHADRESH PATEL
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Sergio Garcia Carreon
Works. Find the price of this product is very good
Maxim Krasnov
Jums var patikt
Cilvēki skatās IKP08N65F5, tad nopirka
IKP08N65F5 Jaunumi
03/14/2023
03/13/2023
03/13/2023
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